Effect of crystal orientation on ohmic contact formation for n-type gallium nitride

DOI Web Site Web Site 12 References Open Access

Description

The present paper describes the influence of surface orientation of n-type GaN on the electrical properties and the interfacial reaction between GaN and Ti during annealing. Although the contact formed on (0001) Ga-face of GaN performs the highest electrical conductance in the as-deposited state, the conductance deteriorates significantly by annealing even at a low temperature of 773 K. A considerable amount of Ti-Ga intermetallic compounds is formed at the deteriorated interfaces, to which the deterioration is attributed.

Journal

References(12)*help

See more

Related Projects

See more

Details 詳細情報について

Report a problem

Back to top