Charge-Carrier Injection into Pentacene Thin Film Formed on Si(111) Probed by STM Spectroscopy
説明
The injection of charge carriers into a pentacene thin film formed on a Si substrate was investigated by scanning tunneling microscopy (STM). Tip height versus bias voltage (z-V) spectroscopy reveals the characteristic charge transport properties of the molecular film, i.e., the conductivity and the threshold energy of charge injection. The abrupt descent of the tip into the film owing to the transition of film conductance, which depends on the degree of charge carrier injection, was observed for crystallized pentacene thin films. The lower film conductance at around zero bias voltage is still higher than that of a vacuum. This indicates that the carrier injection barrier between the pentacene and the semiconducting substrate is extremely low. The convergence of the carrier injection endpoints into a narrow range of electric-field intensity implies that the main factor contributing to barrier formation and collapse is not the bias voltage but the electric field.
収録刊行物
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- Journal of Nanoscience and Nanotechnology
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Journal of Nanoscience and Nanotechnology 11 (4), 2867-2872, 2011-04-01
American Scientific Publishers
