Electric Transport Characteristics of Gallium Iron Oxide Epitaxial Thin Film

DOI PDF Web Site Web Site 参考文献13件

書誌事項

公開日
2017-11
資源種別
journal article
権利情報
  • http://www.springer.com/tdm
  • http://www.springer.com/tdm
DOI
  • 10.1557/adv.2017.370
公開者
Springer Science and Business Media LLC

説明

A Ga0.8Fe1.2O3 epitaxial thin film was fabricated on a SrTiO3(111) substrate using pulsed laser deposition. The film is c-axis-oriented and has multiple in-plane domains. In-plane magnetization measurements show that it exhibits ferrimagnetic behavior with a Curie temperature (TC) of 290 K. The insulating film exhibits hopping conduction with a resistivity (ρ) of 4 × 105 Ωcm at 300 K. The ρ value is four orders lower than that of a BiFeO3 film, probably owing to the formation of multiple in-plane domains in the Ga0.8Fe1.2O3 film. Positive magnetoresistance with a maximum value of 3.5% near TC was observed, suggesting that antiferromagnetic interaction between Fe3+ ions decreases carrier transfer between the ions.

収録刊行物

  • MRS Advances

    MRS Advances 2 (56), 3459-3464, 2017-11

    Springer Science and Business Media LLC

参考文献 (13)*注記

もっと見る

関連プロジェクト

もっと見る

問題の指摘

ページトップへ