Large Magnetoresistance and Dirac Line Node in LaAgBi<sub>2</sub>

  • Masayuki Murase
    Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama 226-8503, Japan
  • Takao Sasagawa
    Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama 226-8503, Japan

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Description

We succeeded in growing high quality single crystals of LaAgBi2, which was evidenced by the values of the residual resistivity and the residual resistivity ratio. Compared with the previous report,...

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