The role of dot height in determining exciton lifetimes in shallow InAs/GaAs quantum dots
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- T. E. J. Campbell-Ricketts
- Eindhoven University of Technology Photonics and Semiconductor Nanophysics, COBRA, , P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
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- N. A. J. M. Kleemans
- Eindhoven University of Technology Photonics and Semiconductor Nanophysics, COBRA, , P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
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- R. Nötzel
- Eindhoven University of Technology Photonics and Semiconductor Nanophysics, COBRA, , P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
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- A. Yu. Silov
- Eindhoven University of Technology Photonics and Semiconductor Nanophysics, COBRA, , P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
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- P. M. Koenraad
- Eindhoven University of Technology Photonics and Semiconductor Nanophysics, COBRA, , P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
書誌事項
- 公開日
- 2010-01-18
- DOI
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- 10.1063/1.3293294
- 公開者
- AIP Publishing
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説明
<jats:p>The spectral dependence of the photoluminescence recombination lifetime has been measured for individual self-assembled InGaAs/GaAs quantum dots, over the entire emission envelope. The measurements show a rising trend with increasing emission wavelength, increasing from 680 ps at 900 nm to about 1020 ps at 990 nm. Measurements of the out-of-plane diamagnetic coefficients for the dots show almost no correlation with wavelength. As a result, the rising trend in the lifetimes with wavelength is interpreted in terms of the emission energy being predominantly determined by the dot height, with higher dots exhibiting longer lifetimes.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 96 (3), 033102-, 2010-01-18
AIP Publishing
