Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devices

詳細情報 詳細情報について

• CRID

  1360292618995350144

• DOI

  10.1016/0022-0248(84)90418-4

• ISSN

  00220248

• Web Site

  https://api.elsevier.com/content/article/PII:0022024884904184?httpAccept=text/xml

  https://api.elsevier.com/content/article/PII:0022024884904184?httpAccept=text/plain

• データソース種別

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