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Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
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- Mitsuhiro Kushibe
- UPR Ultra-Low-Loss Power Device Technology Research Body
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- Yuuki Ishida
- National Institute of Advanced Industrial Science and Technology (AIST)
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- Hajime Okumura
- National Institute of Advanced Industrial Science and Technology (AIST)
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- Tetsuo Takahashi
- National Institute of Advanced Industrial Science and Technology
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- Koh Masahara
- UPR Ultra-Low-Loss Power Device Technology Research Body
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- Takaya Ohno
- UPR Ultra-Low-Loss Power Device Technology Research Body
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- Takahito Suzuki
- Niigata University
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- Tomoyuki Tanaka
- UPR Ultra-Low-Loss Power Device Technology Research Body
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- Sadafumi Yoshida
- Saitama University
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- Kazuo Arai
- National Institute of Advanced Industrial Science and Technology (AIST)
Journal
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- Materials Science Forum
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Materials Science Forum 338-342 169-172, 2000-05-10
Trans Tech Publications, Ltd.
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Details 詳細情報について
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- CRID
- 1360292619554738304
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- ISSN
- 16629752
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- Data Source
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- Crossref
- OpenAIRE
