Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film

DOI PDF 被引用文献2件
  • A. Gerber
    Institute of Solid State Research (IFF) , Research Center Jülich, 52425 Jülich, Germany and the Center for Nanoelectronic Systems for Information Technology (CNI), Research Center Jülich, 52425 Jülich, Germany
  • H. Kohlstedt
    Institute of Solid State Research (IFF) , Research Center Jülich, 52425 Jülich, Germany and the Center for Nanoelectronic Systems for Information Technology (CNI), Research Center Jülich, 52425 Jülich, Germany
  • M. Fitsilis
    Institute of Solid State Research (IFF) , Research Center Jülich, 52425 Jülich, Germany and the Center for Nanoelectronic Systems for Information Technology (CNI), Research Center Jülich, 52425 Jülich, Germany
  • R. Waser
    Institute of Solid State Research (IFF) , Research Center Jülich, 52425 Jülich, Germany and the Center for Nanoelectronic Systems for Information Technology (CNI), Research Center Jülich, 52425 Jülich, Germany
  • T. J. Reece
    University of Nebraska Department of Physics and Astronomy, , Lincoln, Nebraska 68588-0111 and Nebraska Center for Materials and Nanoscience, , Lincoln, Nebraska 68588-0111
  • S. Ducharme
    University of Nebraska Department of Physics and Astronomy, , Lincoln, Nebraska 68588-0111 and Nebraska Center for Materials and Nanoscience, , Lincoln, Nebraska 68588-0111
  • E. Rije
    Institute for Thin Films and Interfaces (ISG 1) , Research Center Jülich, 52425 Jülich, Germany and the Center of Nanoelectronic Systems for Information Technology (CNI), Research Center Jülich, 52425 Jülich, Germany

この論文をさがす

説明

<jats:p>We report the electrical characteristics of metal-ferroelectric-insulator-semiconductor structures, where the ferroelectric layer is a Langmuir-Blodgett film of a copolymer of 70% vinylidene fluoride and 30% trifluoroethylene. The 36-nm thick copolymer films were deposited on thermally oxidized (10nm SiO2) p-type silicon and covered with a gold gate electrode. Polarization-field hysteresis loops indicate polarization switching in the polymer film. The device capacitance shows hysteresis when cycling the applied voltage between ±3V, exhibiting a zero-bias on/off capacitance ratio of over 3:1 and a symmetric memory window 1V wide, with little evidence of bias that can arise from traps in the oxide. Model calculations are in good agreement with the data and show that film polarization was not saturated. The capacitance hysteresis vanishes above the ferroelectric-paraelectric transition temperature, showing that it is due to polarization hysteresis. The retention time of both the on and off states was approximately 15min at room temperature, possibly limited by leakage or by polarization instability in the unsaturated film. These devices provide a basis for nonvolatile data storage devices with fast nondestructive readout.</jats:p>

収録刊行物

被引用文献 (2)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ