Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode
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- Shigehisa Yamamoto
- Mitsubishi Electric Corporation
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- Yukiyasu Nakao
- Mitsubishi Electric Corporation
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- Nobuyuki Tomita
- Mitsubishi Electric Corporation
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- Shuhei Nakata
- Mitsubishi Electric Corporation
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- Satoshi Yamakawa
- Mitsubishi Electric Corporation
説明
<jats:p>In order to achieve cost reduction or shrinkage of power devices, an internal body diode, which forms in a MOSFET parasitically, can be designed as a free-wheeling diode in substitution for an external Schottky barrier diode (SBD). However, in a SiC p-i-n diode, forward current stress causes reliability degradation due to expansion of the electron-hole recombination-induced stacking faults. Applying the process optimization of the epitaxial layer for the reduction of recombination-induced stacking faults and the body diode screening method to 3.3 kV SiC-MOSFETs, we obtained more stable devices under forward current operation.</jats:p>
収録刊行物
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- Materials Science Forum
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Materials Science Forum 778-780 951-954, 2014-02-26
Trans Tech Publications, Ltd.