Anisotropy and kinetics of the etching of tungsten in SF6 multipolar microwave plasma

DOI PDF 被引用文献2件
  • A. Durandet
    Laboratoire de Physique des Milieux Ionisés, Université Joseph Fourier, CNRS UA 844, CNET, BP 98, 38243 Meylan Cedex, France
  • Y. Arnal
    Laboratoire de Physique des Milieux Ionisés, Université Joseph Fourier, CNRS UA 844, CNET, BP 98, 38243 Meylan Cedex, France
  • J. Pelletier
    Laboratoire de Physique des Milieux Ionisés, Université Joseph Fourier, CNRS UA 844, CNET, BP 98, 38243 Meylan Cedex, France
  • C. Pomot
    Laboratoire de Physique des Milieux Ionisés, Université Joseph Fourier, CNRS UA 844, CNET, BP 98, 38243 Meylan Cedex, France

書誌事項

公開日
1990-03-01
DOI
  • 10.1063/1.345524
公開者
AIP Publishing

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<jats:p>An experimental study of the etching of tungsten with SF6 has been performed in a microwave multipolar plasma using an electron cyclotron resonance excitation with an independent low dc biasing. The anisotropy and etch rate of tungsten have been measured as a function of atomic fluorine concentration in the plasma and compared with silicon characteristics. The etching mechanisms of tungsten are analyzed in light of published data on the fluorine-tungsten interaction, and the results are explained in terms of the diffusion model for plasma etching developed for the Si-F system. Atomic fluorine adsorption on tungsten appears to be monolayerlike, whereas it is of multilayer type on silicon, and associative desorption of WF6 occurs from WF3 and/or WF4 adspecies in nearest-neighbor positions.</jats:p>

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