-
- D. W. Zhao
- A*STAR (Agency for Science, Technology and Research) 1 Institute of Microelectronics, , 11 Science Park Road, Science Park II, Singapore 117685, Singapore
-
- X. W. Sun
- A*STAR (Agency for Science, Technology and Research) 1 Institute of Microelectronics, , 11 Science Park Road, Science Park II, Singapore 117685, Singapore
-
- C. Y. Jiang
- A*STAR (Agency for Science, Technology and Research) 1 Institute of Microelectronics, , 11 Science Park Road, Science Park II, Singapore 117685, Singapore
-
- A. K. K. Kyaw
- A*STAR (Agency for Science, Technology and Research) 1 Institute of Microelectronics, , 11 Science Park Road, Science Park II, Singapore 117685, Singapore
-
- G. Q. Lo
- A*STAR (Agency for Science, Technology and Research) 1 Institute of Microelectronics, , 11 Science Park Road, Science Park II, Singapore 117685, Singapore
-
- D. L. Kwong
- A*STAR (Agency for Science, Technology and Research) 1 Institute of Microelectronics, , 11 Science Park Road, Science Park II, Singapore 117685, Singapore
説明
<jats:p>We report efficient tandem organic solar cells with an Al and MoO3 intermediate layer. Such an intermediate layer with optimized thickness (1 nm Al and 15 nm MoO3) has high transparency (∼98% in the range from 350 to 900 nm) and efficient charge collections to realize electric connection in series. For polymer-small molecule tandem cell, due to the summation (1.01 V) of the open-circuit voltages of individual cells and a short-circuit current density of 6.05 mA/cm2, a power conversion efficiency (PCE) of 2.82% was obtained under 100 mW/cm2 illumination, which is larger than either of the individual cells. The PCE reached 3.88% when the tandem cell was illuminated under 300 mW/cm2. Additionally, we applied Al/MoO3 intermediate layer to realize a solution-processed polymer tandem cell with a high PCE (2.23%). The thick MoO3 (15 nm) provides a complete protection of the prior-deposited polymer layer from dissolving during the top cell polymer coating.</jats:p>
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 93 (8), 083305-, 2008-08-25
AIP Publishing