A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension
書誌事項
- 公開日
- 2011-07
- 権利情報
-
- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
-
- 10.1109/led.2011.2144561
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
-
- IEEE Electron Device Letters
-
IEEE Electron Device Letters 32 (7), 880-882, 2011-07
Institute of Electrical and Electronics Engineers (IEEE)