Multiple electron beam generation from InGaN photocathode

DOI PDF 参考文献25件
  • Daiki Sato
    Photo Electron Soul Inc., Nagoya University Incubation Facility 1 , Furo-cho, Chikusa-ku, Nagoya 464-0814, Japan
  • Haruka Shikano
    Photo Electron Soul Inc., Nagoya University Incubation Facility 1 , Furo-cho, Chikusa-ku, Nagoya 464-0814, Japan
  • Atsushi Koizumi
    Photo Electron Soul Inc., Nagoya University Incubation Facility 1 , Furo-cho, Chikusa-ku, Nagoya 464-0814, Japan
  • Tomohiro Nishitani
    Photo Electron Soul Inc., Nagoya University Incubation Facility 1 , Furo-cho, Chikusa-ku, Nagoya 464-0814, Japan
  • Yoshio Honda
    Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University 2 , Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan
  • Hiroshi Amano
    Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University 2 , Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan

この論文をさがす

説明

<jats:p>In this study, we generated 25 multielectron beam (MEB) using an InGaN photocathode with a negative electron affinity state irradiating with 25 multilaser beam. The uniformity of the MEB and the total electron beam current were evaluated. A laser beam was split into 25 laser beams using a spatial light modulator. The coefficient of variation (CV) of laser power was 20%. The CV of quantum efficiency was 1.1%. The CV of electron beam current was 12%, and the total current was about 1.2 μA. These results will enhance the development of the MEB-defect inspection using the InGaN photocathode.</jats:p>

収録刊行物

参考文献 (25)*注記

もっと見る

関連プロジェクト

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ