Analog Circuit Applications Based on All‐2D Ambipolar ReSe<sub>2</sub> Field‐Effect Transistors
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- Ko‐Chun Lee
- Institute of Electronics Engineering National Tsing Hua University Hsinchu 30013 Taiwan
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- Shih‐Hsien Yang
- Institute of Electronics Engineering National Tsing Hua University Hsinchu 30013 Taiwan
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- Yung‐Shang Sung
- Department of Physics National Chung Hsing University Taichung 40227 Taiwan
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- Yuan‐Ming Chang
- Department of Physics National Chung Hsing University Taichung 40227 Taiwan
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- Che‐Yi Lin
- Department of Electrophysics National Chiao Tung University Hsinchu 300 Taiwan
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- Feng‐Shou Yang
- Institute of Electronics Engineering National Tsing Hua University Hsinchu 30013 Taiwan
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- Mengjiao Li
- Key Laboratory of Polar Materials and Devices Ministry of Education Department of Electronic Engineering East China Normal University Shanghai 200241 China
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- Kenji Watanabe
- National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 Japan
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- Takashi Taniguchi
- National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 Japan
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- Ching‐Hwa Ho
- Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology Taipei 106 Taiwan
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- Chen‐Hsin Lien
- Institute of Electronics Engineering National Tsing Hua University Hsinchu 30013 Taiwan
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- Yen‐Fu Lin
- Department of Physics National Chung Hsing University Taichung 40227 Taiwan
説明
<jats:title>Abstract</jats:title><jats:p>Complementary circuits based on 2D materials show great promise for next‐generation electronics. An ambipolar all‐2D ReSe<jats:sub>2</jats:sub> field‐effect transistor (FET) with a hexagonal boron nitride gate dielectric is fabricated and its electronic characteristics are comprehensively studied by temperature dependence and noise measurements. Ambipolar transfer characteristics are achieved owing to the tunable Fermi level of the graphene contact and negligible and 30 meV Schottky barrier heights for the n‐ and p‐channel regimes, respectively. An inverter is also fabricated to demonstrate ambipolar ReSe<jats:sub>2</jats:sub> FET operation in a logic circuit. Furthermore, a p/n switchable unipolar FET is designed and shows potential for building complimentary circuits from a signal device. This work demonstrates the potential of all‐2D ReSe<jats:sub>2</jats:sub> FETs and makes available new approaches for designing next‐generation devices.</jats:p>
収録刊行物
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- Advanced Functional Materials
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Advanced Functional Materials 29 (22), 2019-04-02
Wiley