Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices

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  • Han Yan
    School of Materials Science and Engineering Beihang University Beijing 100191 China
  • Zexin Feng
    School of Materials Science and Engineering Beihang University Beijing 100191 China
  • Peixin Qin
    School of Materials Science and Engineering Beihang University Beijing 100191 China
  • Xiaorong Zhou
    School of Materials Science and Engineering Beihang University Beijing 100191 China
  • Huixin Guo
    School of Materials Science and Engineering Beihang University Beijing 100191 China
  • Xiaoning Wang
    School of Materials Science and Engineering Beihang University Beijing 100191 China
  • Hongyu Chen
    School of Materials Science and Engineering Beihang University Beijing 100191 China
  • Xin Zhang
    School of Materials Science and Engineering Beihang University Beijing 100191 China
  • Haojiang Wu
    School of Materials Science and Engineering Beihang University Beijing 100191 China
  • Chengbao Jiang
    School of Materials Science and Engineering Beihang University Beijing 100191 China
  • Zhiqi Liu
    School of Materials Science and Engineering Beihang University Beijing 100191 China

Description

<jats:title>Abstract</jats:title><jats:p>In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric‐field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting‐edge research, including electric‐field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin–orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto‐ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high‐quality room‐temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward‐looking perspective that will promote the rapid development of this field.</jats:p>

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