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Stable performance Nb variable thickness microbridge type Josephson junctions: A reproducible fabrication technique
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- Jun-ichi Kodama
- Department of Electronic Engineering, Faculty of Science and Technology, Kinki University, 3-4-1 Kowakae Higashiosaka City, Osaka-Fu, 577 Japan
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- Shigeki Hontsu
- Department of Electronic Engineering, Faculty of Science and Technology, Kinki University, 3-4-1 Kowakae Higashiosaka City, Osaka-Fu, 577 Japan
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- Heihachiro Hirai
- Department of Electronic Engineering, Faculty of Science and Technology, Kinki University, 3-4-1 Kowakae Higashiosaka City, Osaka-Fu, 577 Japan
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- Hisao Oka
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Mizuhara, Itami, 664 Japan
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- Tadao Kato
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Mizuhara, Itami, 664 Japan
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- Yaichiro Watakabe
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Mizuhara, Itami, 664 Japan
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- Taka-aki Kato
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Mizuhara, Itami, 664 Japan
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Description
<jats:p>A novel method of fabrication, as described in the following, was developed that ensures a good reproducibility of the junction. Namely, poly-Si was deposited over a Si substrate whose surface had been previously thermally oxidized. The poly-Si overlaid surface was then thermally oxidized. The bridge configuration of the junction was microprocessed by means of electron beam lithography. The fabricated configuration served as a mask in depositing the Nb layer on the substrate by means of rf sputtering to conclude the fabrication of a microbridge Josephson junction. The final process of the formation of the variable thickness microbridge configuration was readily carried out by placing another properly shaped mask over the masking bridge or by forming an SiO2 layer over the poly-Si layer. The SiO2 layer was processed by selective plasma etching so that it would act as a mask over the bridge portion. The stabilization of the characteristics of the junction has been achieved due to the passivation which takes place during the heat treatment in atmosphere by forced oxidation of the Nb film surface and to the annealing of the film itself.</jats:p>
Journal
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- Journal of Applied Physics
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Journal of Applied Physics 54 (6), 3295-3301, 1983-06-01
AIP Publishing
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Keywords
Details 詳細情報について
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- CRID
- 1360294648146865152
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- DOI
- 10.1063/1.332442
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- ISSN
- 10897550
- 00218979
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- Data Source
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- Crossref
- OpenAIRE