Unpinned GaAs Schottky barriers with an epitaxial silicon layer

DOI PDF 被引用文献1件
  • J. C. Costa
    Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
  • T. J. Miller
    Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
  • F. Williamson
    Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
  • M. I. Nathan
    Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455

書誌事項

公開日
1991-08-15
DOI
  • 10.1063/1.349456
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>We present experimental results of Al/n- and Al/p-type GaAs Schottky barrier structures grown in situ by molecular-beam epitaxy with thin Si epitaxial interfacial layers. The barrier heights are measured by the I-V, thermal activation, C-V, and photoresponse methods. Barrier heights in the range of 0.3&lt;φbN&lt;1.04 eV for n-type GaAs and 0.28 &lt; φbP&lt;1.01 eV for p-type GaAs were obtained for Si layer thicknesses between 6 and 100 Å. Annealing studies conducted on the samples indicate that the structures are thermally stable to temperatures up to 450 °C. These results imply that the GaAs surface Fermi level at the Si/GaAs interface is unpinned from its customary near-midgap value. A model which involves the energy-band discontinuities ΔEC and ΔEV between GaAs and Si, the thickness, and the doping of the Si layer is suggested to account for the different barrier-height values obtained.</jats:p>

収録刊行物

被引用文献 (1)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ