Properties of ultrathin thermal nitrides in silicon Schottky barrier structures

DOI PDF 被引用文献1件
  • M. A. Sobolewski
    Stanford Electronics Laboratories, Department of Electrical Engineering, Stanford University, Stanford, California 94305
  • C. R. Helms
    Stanford Electronics Laboratories, Department of Electrical Engineering, Stanford University, Stanford, California 94305

書誌事項

公開日
1989-02-13
DOI
  • 10.1063/1.100903
公開者
AIP Publishing

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説明

<jats:p>Thermally grown silicon nitride layers ≤30 Å thick have been investigated as interfacial layers in silicon Schottky barrier structures. Current-voltage characteristics of these devices show modified barrier heights with near unity ideality factors, more ideal than those obtained using silicon dioxide films of the same thickness. By appropriate choice of metal or of nitride layer thickness barrier heights in any desired range can be produced. Barrier heights of different metals are ‘‘unpinned’’: they differ by a fixed constant, independent of the thickness, indicating that interface trap states are not present in sufficient quantity to affect the barrier height. The barrier height varies roughly linearly with nitride thickness, for both as-grown and etched films, suggesting the presence of a constant quantity of positive fixed charge located at the silicon-silicon nitride interface.</jats:p>

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