Enhancement of the magnetoresistance due to structural transition in Mg-doped perovskite Mn oxides

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  • A. Anane
    Institut d''Electronique Fondamentale, CNRS URA 22, Bâtiment 220, Université Paris Sud, 91405-Orsay Cedex, France
  • C. Dupas
    Institut d''Electronique Fondamentale, CNRS URA 22, Bâtiment 220, Université Paris Sud, 91405-Orsay Cedex, France
  • K. Le Dang
    Institut d''Electronique Fondamentale, CNRS URA 22, Bâtiment 220, Université Paris Sud, 91405-Orsay Cedex, France
  • J. P. Renard
    Institut d''Electronique Fondamentale, CNRS URA 22, Bâtiment 220, Université Paris Sud, 91405-Orsay Cedex, France
  • P. Veillet
    Institut d''Electronique Fondamentale, CNRS URA 22, Bâtiment 220, Université Paris Sud, 91405-Orsay Cedex, France
  • L. Pinsard
    Laboratoire de Chimie des Solides, CNRS URA 446, Bâtiment 414, Université Paris Sud, 91405-Orsay Cedex, France
  • A. Revcolevschi
    Laboratoire de Chimie des Solides, CNRS URA 446, Bâtiment 414, Université Paris Sud, 91405-Orsay Cedex, France

Description

<jats:p>Substitution of magnesium for manganese in mixed perovskite La1−xSrxMnO3was found to reduce the electrical conductivity and the Curie temperature Tc. A remarkable jump in the resistivity ρ was observed in the 6% Mg-doped crystal with x=0.175. This sample remains semiconducting at low temperatures, contrary to the Mg-free crystal. The abrupt change of ρ reflects a first-order structural transition at a temperature Ts just below Tc. An applied magnetic field decreased Ts, leading to an enhancement of the magnetoresistance between Ts (0) and Ts (H). The microscopic properties of Mn3+ and Mn4+ ions due to Sr2+and Mg2+ substitutions were illustrated by 55Mn nuclear magnetic resonance study.</jats:p>

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