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Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics
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Journal
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- IEEE Photonics Technology Letters
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IEEE Photonics Technology Letters 2 (4), 231-233, 1990-04
Institute of Electrical and Electronics Engineers (IEEE)
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Keywords
Details 詳細情報について
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- CRID
- 1360298341313793792
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- DOI
- 10.1109/68.53245
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- ISSN
- 19410174
- 10411135
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- Data Source
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- Crossref
