InGaAs/GaAs/InGaP multiple-quantum-well lasers prepared by gas-source molecular beam epitaxy

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  • J. M. Kuo
    AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
  • Y. K. Chen
    AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
  • M. C. Wu
    AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
  • M. A. Chin
    AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974

説明

<jats:p>We report on the first room-temperature operation of aluminum-free In0.2Ga0.8As/GaAs/ In0.49Ga0.51P multiple-quantum-well lasers grown by gas-source molecular beam epitaxy. These lasers have low threshold current density Jth of 177 A/cm2, high internal quantum efficiency of 91%, and low internal waveguide loss of 9.1 cm−1. The characteristic temperature T0 is 150 K, which is the highest value ever reported. These results demonstrate that gas-source molecular beam epitaxy is suitable for growing high-quality In0.2Ga0.8As/GaAs/In0.49Ga0.51P lasers.</jats:p>

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