Infrared-visible (0.89–0.72 μm) Al<i>x</i>Ga1−<i>x</i>As/Al<i>y</i>Ga1−<i>y</i>As double-heterostructure lasers grown by molecular beam epitaxy

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<jats:p>Room-temperature low-current-threshold broad-area Fabry-Perot AlxGa1−xAs/AlyGa1−y As double-heterostructure (DH) lasers have been prepared by molecular-beam epitaxy (MBE) covering the lasing emission wavelength from 8900 to 7200 Å (infrared to visible). In this emission range, the averaged pulsed current threshold densities Jth are as low as those obtained by liquid-phase epitaxy (LPE). At ∼8200 Å, the wavelength at which DH lasers have also been prepared by metalorganic chemical-vapor deposition (MO-CVD), the Jth ’s of the MBE grown lasers are lower.</jats:p>

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