GaAs <i>p</i>-<i>i</i>-<i>n</i> photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine

DOI PDF 被引用文献1件
  • H. B. Serreze
    American Cyanamid Company, Chemical Research Division, Stamford, Connecticut 06904
  • J. A. Baumann
    American Cyanamid Company, Chemical Research Division, Stamford, Connecticut 06904
  • L. Bunz
    American Cyanamid Company, Chemical Research Division, Stamford, Connecticut 06904
  • R. Schachter
    American Cyanamid Company, Chemical Research Division, Stamford, Connecticut 06904
  • R. D. Esman
    Naval Research Laboratory, Washington, DC 20375

書誌事項

公開日
1989-12-11
DOI
  • 10.1063/1.101973
公開者
AIP Publishing

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説明

<jats:p>High-speed, 80-μm-diam, GaAs/Alx Ga1−x As p-i-n photodiodes having frequency response in excess of 7 GHz and internal quantum efficiency approaching 100% were fabricated by low-pressure metalorganic chemical vapor deposition (MOCVD) using both tertiarybutylarsine (TBA) and arsine. These are the highest performance MOCVD GaAs devices achieved with nonarsine sources and comparable to the best reported p-i-n photodiodes of similar size. Net carrier concentration of the undoped TBA GaAs was determined by capacitance-voltage analysis to be less than 5×1014 cm−3 . Photoluminescence measurements indicate that undoped TBA-grown Alx Ga1−x As (x=0.25) is also of excellent quality (FWHM=12 meV). Growth conditions leading to optimized devices were found to be similar for the two sources.</jats:p>

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