Inverted thermal conversion—GaAs, a new alternative material for integrated circuits

DOI PDF 被引用文献4件
  • J. Lagowski
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
  • H. C. Gatos
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
  • C. H. Kang
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
  • M. Skowronski
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
  • K. Y. Ko
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
  • D. G. Lin
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

書誌事項

公開日
1986-10-06
DOI
  • 10.1063/1.97527
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>We developed a new type of GaAs which exhibits inverted thermal conversion (ITC), i.e., it converts from conducting to semi-insulating upon annealing at about 850 °C. In device fabrication, its low resistivity, prior to high-temperature processing, differentiates ITC from the standard semi-insulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal growth modification. Thus, EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semi-insulating state during 850 °C annealing is caused by the formation of EL2 consistent with our earlier proposed EL2 model.</jats:p>

収録刊行物

被引用文献 (4)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ