EPR of iron‐boron centres in silicon

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<jats:title>Abstract</jats:title><jats:p>The EPR spectra of one type of iron‐boron centres detected in low‐resistivity B‐doped p‐silicon after iron doping are investigated in detail. The spectra are characterized by a dominating zerofield splitting and a resolved SHF structure due to the interaction with the boron isotopes and arise from interstitially incorporated Fe<jats:sup>+</jats:sup> ions adjacent in 〈111〉 directions to B<jats:sup>−</jats:sup> ions on substitutional sites.</jats:p>

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