Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates

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We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser diodes on Si substrates grown by metalorganic chemical vapor deposition. The dislocations propagate at velocities up to ～75 μm/h along 〈100〉 and ～20 μm/h along 〈110〉, which cause an increase in threshold current and a decrease in differential quantum efficiency. The degraded current-voltage characteristic resulted from the defect‐assisted impurity diffusion. The degradation process occurs very rapidly due to the presence of a high density of defects and thermally induced strain.

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