Thermal stability of TiSi2 on mono- and polycrystalline silicon

DOI PDF 被引用文献1件
  • C. Y. Wong
    IBM, T. J. Watson Research Center, P.O. Box. 218, Yorktown Heights, New York 10598
  • L. K. Wang
    IBM, T. J. Watson Research Center, P.O. Box. 218, Yorktown Heights, New York 10598
  • P. A. McFarland
    IBM, T. J. Watson Research Center, P.O. Box. 218, Yorktown Heights, New York 10598
  • C. Y. Ting
    IBM, T. J. Watson Research Center, P.O. Box. 218, Yorktown Heights, New York 10598

書誌事項

公開日
1986-07-01
DOI
  • 10.1063/1.337688
公開者
AIP Publishing

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<jats:p>Thermal stability of TiSi2 on mono- and polycrystalline silicon was investigated by cross-sectional transmission electron microscopy and high-resolution electron energy loss spectroscopy. Additional heat treatments after silicide formation result in a rough silicide/silicon interface, discontinuity of the metal silicide film, and a penetration of silicide into silicon/polycrystalline silicon substrates. Plausible explanations for these observations are presented.</jats:p>

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