Nanostructured Si–Ge thermoelectric material for 1200 V/W highly sensitive infrared thermopile sensor device
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- Kyohei Kakuyama
- Sumitomo Electric Industries, Ltd., Transmission Devices Laboratory 1 , 1-1-1, Koyakita, Itami-Shi, Hyogo 664-0016, Japan
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- Kotaro Hirose
- Sumitomo Electric Industries, Ltd., Transmission Devices Laboratory 1 , 1-1-1, Koyakita, Itami-Shi, Hyogo 664-0016, Japan
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- Masahiro Adachi
- Sumitomo Electric Industries, Ltd., Transmission Devices Laboratory 1 , 1-1-1, Koyakita, Itami-Shi, Hyogo 664-0016, Japan
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- Tsunehiro Takeuchi
- Toyota Technological Institute, Research Center for Smart Energy Technologies 2 , 2-12-1, Hisakata, Tenpaku-ku, Nagoya-shi 468-8511, Aichi, Japan
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- Masafumi Kimata
- Consultant 3 , 2-1-9, Suimeidai, Kawanishi-shi, Hyogo 666-0016, Japan
抄録
<jats:p>In this paper, we report the characteristics of a thermopile infrared sensor in which a nanostructured Si–Ge thermoelectric material is used. Although the thermopile infrared sensor is capable of being operated without power consumption, a challenge has been improving its sensitivity. With the aim of improving its sensitivity, we have realized a nanostructured Si–Ge thermoelectric material with low thermal conductivity (0.8 W/m K or less) by forming nanocrystals through heat treatment of amorphous Si–Ge. The thermopile infrared sensor composed of this material exhibited a high sensitivity of 1200 V/W at a pressure of 1.0 × 10−1 Pa or less.</jats:p>
収録刊行物
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- AIP Advances
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AIP Advances 13 (3), 2023-03-01
AIP Publishing