Ultrahigh-Mobility and Solution-Processed Inorganic P-Channel Thin-Film Transistors Based on a Transition-Metal Halide Semiconductor
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- Han Ju Lee
- Department of Materials Science and Engineering, Chungnam National University (CNU), Daejeon 34134, Republic of Korea
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- Seonjeong Lee
- Department of Materials Science and Engineering, Chungnam National University (CNU), Daejeon 34134, Republic of Korea
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- Yena Ji
- Department of Materials Science and Engineering, Chungnam National University (CNU), Daejeon 34134, Republic of Korea
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- Kyung Gook Cho
- Department of Chemistry and Chemical Engineering, Inha University, Incheon 402-751, Republic of Korea
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- Keun Hyung Lee
- Department of Chemistry and Chemical Engineering, Inha University, Incheon 402-751, Republic of Korea
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- Kihyon Hong
- Department of Materials Science and Engineering, Chungnam National University (CNU), Daejeon 34134, Republic of Korea
Journal
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- ACS Applied Materials & Interfaces
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ACS Applied Materials & Interfaces 11 (43), 40243-40251, 2019-10-08
American Chemical Society (ACS)
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Details 詳細情報について
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- CRID
- 1360298760872649344
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- ISSN
- 19448252
- 19448244
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- Data Source
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- Crossref