Customization of MoS<sub>2</sub> Phototransistors via Thiol‐Based Functionalization
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- Healin Im
- School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440‐745 Republic of Korea
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- Arindam Bala
- School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440‐745 Republic of Korea
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- Byungjun So
- School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440‐745 Republic of Korea
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- Young Jun Kim
- BioNano Health Guard Research Center (H‐GUARD) Daejeon 34141 Republic of Korea
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- Sunkook Kim
- School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440‐745 Republic of Korea
Description
<jats:title>Abstract</jats:title><jats:p>The thiol‐based functionalization of multilayer MoS<jats:sub>2</jats:sub> is performed to customize its electrical and optical performance. Two types of thiol‐terminated organic molecules are utilized: 4‐amino thiophenol (4ATP) for electron‐donating and 4‐nitro thiophenol (4NTP) for electron‐withdrawing. The thiol groups in these molecules chemically bond with MoS<jats:sub>2</jats:sub> at the sulfur vacancies through the simple solution process. 4ATP‐functionalized MoS<jats:sub>2</jats:sub> (4ATP–MoS<jats:sub>2</jats:sub>) transistors exhibit a huge enhancement in the current and the carrier concentration, whereas 4NTP‐functionalized MoS<jats:sub>2</jats:sub> (4NTP–MoS<jats:sub>2</jats:sub>) transistors show the reduction in the film conductance. Moreover, functionalization with 4ATP and 4NTP complementarily modulate the photoresponsive characteristics of MoS<jats:sub>2</jats:sub> transistors. Under 405 nm laser illumination, 4ATP–MoS<jats:sub>2</jats:sub> phototransistors exhibit the enhanced photoresponsivity of 669.10 A W<jats:sup>−1</jats:sup> attributed to the large dark currents. In contrast, 4NTP–MoS<jats:sub>2</jats:sub> phototransistors can achieve faster photoswitching performances than 4ATP–MoS<jats:sub>2</jats:sub>. Therefore, the thiol‐based functionalization can effectively customize the electrical and optical characteristics of multilayer MoS<jats:sub>2</jats:sub>.</jats:p>
Journal
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- Advanced Electronic Materials
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Advanced Electronic Materials 7 (11), 2021-08-19
Wiley
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Details 詳細情報について
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- CRID
- 1360298761964347264
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- ISSN
- 2199160X
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- Data Source
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- Crossref