High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing
収録刊行物
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- Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials
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Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials 2023-09-07
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1360302864796182272
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- 資料種別
- journal article
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- データソース種別
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- Crossref
- KAKEN
