Effect of Interfacial Oxide Layers on Self-Doped PEDOT/Si Hybrid Solar Cells

DOI Web Site 参考文献44件 オープンアクセス
  • Aditya Saha
    Institute of Fluid Science, Tohoku University, Sendai 980-8577, Japan
  • Ryuji Oshima
    National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan
  • Daisuke Ohori
    Institute of Fluid Science, Tohoku University, Sendai 980-8577, Japan
  • Takahiko Sasaki
    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • Hirokazu Yano
    Organic Materials Research Laboratory, Tosoh Corporation, Shunan 746-8501, Japan
  • Hidenori Okuzaki
    Graduate Faculty of Interdisciplinary Research, University of Yamanashi, Kofu 400-8510, Japan
  • Takashi Tokumasu
    Institute of Fluid Science, Tohoku University, Sendai 980-8577, Japan
  • Kazuhiko Endo
    Institute of Fluid Science, Tohoku University, Sendai 980-8577, Japan
  • Seiji Samukawa
    Institute of Communications Engineering, National Yang Ming Chiao Tung University, Hshinchu 30093, Taiwan

説明

<jats:p>PEDOT:PSS/Si hybrid photovoltaic cells have been attracting attention as a potential way to simplify the manufacturing process and democratize solar energy production. Control of the PEDOT/Si interface is also one of the primary ways to ensure the improved performance and lifetimes of multijunction devices, such as perovskite/Si tandem solar cells. In this work, the effects of the interfacial silicon oxide layer were investigated by creating a novel and controllable neutral beam oxide interlayer with different thicknesses. A novel self-doped PEDOT (S-PEDOT) was used to improve interfacial contact and avoid the secondary doping of PEDOT:PSS. X-ray photoelectron spectroscopy (XPS) showed that the saturation of interfacial silicon atoms in SiOx-Si bonds as well as a very thin, (~1 nm) damage-free oxide interlayer were the keys to maintaining good passivation with a high tunneling current. Lifetime measurements also showed that the interlayers with the most SiO2 content degraded the least. The degradation of the devices was due to the continued growth of the oxide layer through reactions with silicon sub-oxides and the degradation of S-PEDOT.</jats:p>

収録刊行物

  • Energies

    Energies 16 (19), 6900-, 2023-09-30

    MDPI AG

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