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- A. Parisini
- Department of Mathematical, Physical and Computer Sciences, University of Parma 1 , Viale delle Scienze 7/A, 43124 Parma, Italy
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- A. Bosio
- Department of Mathematical, Physical and Computer Sciences, University of Parma 1 , Viale delle Scienze 7/A, 43124 Parma, Italy
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- V. Montedoro
- Department of Mathematical, Physical and Computer Sciences, University of Parma 1 , Viale delle Scienze 7/A, 43124 Parma, Italy
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- A. Gorreri
- Department of Mathematical, Physical and Computer Sciences, University of Parma 1 , Viale delle Scienze 7/A, 43124 Parma, Italy
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- A. Lamperti
- Institute for Microelectronics and Microsystems, CNR-IMM Agrate Unit 3 , Via Camillo Olivetti 2, 20864 Agrate Brianza (MB), Italy
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- M. Bosi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR) 2 , Viale delle Scienze 37/A, 43124 Parma, Italy
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- G. Garulli
- Department of Mathematical, Physical and Computer Sciences, University of Parma 1 , Viale delle Scienze 7/A, 43124 Parma, Italy
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- S. Vantaggio
- Department of Mathematical, Physical and Computer Sciences, University of Parma 1 , Viale delle Scienze 7/A, 43124 Parma, Italy
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- R. Fornari
- Department of Mathematical, Physical and Computer Sciences, University of Parma 1 , Viale delle Scienze 7/A, 43124 Parma, Italy
説明
<jats:p>Low resistivity n-type ε-Ga2O3 epilayers were obtained for the first time either by adding silane to the gas phase during the metal organic vapour phase epitaxy deposition or by diffusing Sn in nominally undoped layers after the growth. The highest doping concentrations were few 1018 cm−3 and about 1017 cm−3 for Si and Sn doping, with corresponding resistivity below 1 and 10 Ω cm, respectively. Temperature dependent transport investigation in the range of 10-600 K shows a resistivity behavior consistent with the Mott law, suggesting that conduction through localized states dominates the electrical properties of Si- and Sn-doped samples. For both types of dopants, two different mechanisms of conduction through impurity band states seem to be present, each of them determining the transport behavior at the lower and higher temperatures of the measurement range.</jats:p>
収録刊行物
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- APL Materials
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APL Materials 7 (3), 031114-, 2019-03-01
AIP Publishing