High Mobility WS<sub>2</sub> Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors

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  • Adha Sukma Aji
    Interdisciplinary Graduate School of Engineering Sciences Kyushu University Kasuga Park 6‐1 Fukuoka 816‐8580 Japan
  • Pablo Solís‐Fernández
    Global Innovation Center (GIC) Kyushu University Kasuga Park 6‐1 Fukuoka 816‐8580 Japan
  • Hyun Goo Ji
    Interdisciplinary Graduate School of Engineering Sciences Kyushu University Kasuga Park 6‐1 Fukuoka 816‐8580 Japan
  • Kenjiro Fukuda
    Thin‐Film Device Laboratory Center for Emergent Matter Science RIKEN Hirosawa 2‐1 Wako Saitama 351‐0198 Japan
  • Hiroki Ago
    Interdisciplinary Graduate School of Engineering Sciences Kyushu University Kasuga Park 6‐1 Fukuoka 816‐8580 Japan

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<jats:title>Abstract</jats:title><jats:p>The electrical contact is one of the main issues preventing semiconducting 2D materials to fulfill their potential in electronic and optoelectronic devices. To overcome this problem, a new approach is developed here that uses chemical vapor deposition grown multilayer graphene (MLG) sheets as flexible electrodes for WS<jats:sub>2</jats:sub> field‐effect transistors. The gate‐tunable Fermi level, van der Waals interaction with the WS<jats:sub>2</jats:sub>, and the high electrical conductivity of MLG significantly improve the overall performance of the devices. The carrier mobility of single‐layer WS<jats:sub>2</jats:sub> increases about a tenfold (50 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup> at room temperature) by replacing conventional Ti/Au metal electrodes (5 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>) with the MLG electrodes. Further, by replacing the conventional SiO<jats:sub>2</jats:sub> substrate with a thin (1 µm) parylene‐C flexible film as insulator, flexible WS<jats:sub>2</jats:sub> photodetectors that are able to sustain multiple bending stress tests without significant performance degradation are realized. The flexible photodetectors exhibited extraordinarily high gate‐tunable photoresponsivities, reaching values of 4500 A W<jats:sup>−1</jats:sup>, and with very short (<2 ms) response time. The work of the heterostacked structure combining WS<jats:sub>2</jats:sub>, graphene, and the very thin polymer film will find applications in various flexible electronics, such as wearable high‐performance optoelectronics devices.</jats:p>

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