Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices

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書誌事項

公開日
2012-07
資源種別
journal article
権利情報
  • https://www.elsevier.com/tdm/userlicense/1.0/
  • https://www.elsevier.com/legal/tdmrep-license
DOI
  • 10.1016/j.ssc.2012.02.026
公開者
Elsevier BV

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説明

Abstract Symmetric GaGdN/AlGaN (Gd concentration: 2%) and GaN/AlGaN double quantum well superlattices (DQW-SLs) were grown by radio-frequency plasma-assisted molecular-beam epitaxy on GaN (0001) templates. Atomic steps were observed on all the sample surfaces by atomic force microscope. X-ray diffraction θ /2 θ scan curves exhibited well-defined satellite structures. Room temperature ferromagnetism was confirmed for the GaGdN/AlGaN DQW-SL samples by using alternating gradient magnetometer. Strong photoluminescence was observed from both GaGdN and GaN QWs at higher energy side of GaN excitonic peak. Magneto-photoluminescence spectra for GaGdN/AlGaN DQW-SL samples showed a large magnetic field dependence of the excitonic energy by applying a magnetic field up to 7 T. The observed strong redshift of excitonic PL indicated an enhancement of Zeeman splitting of the free carrier energy levels in magnetic GaGdN/AlGaN DQW-SL. Enhanced g -factor was estimated to be about 60 for GaGdN/AlGaN DQW-SL sample with QW thickness of 1 nm.

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