High efficiency solution processed OLEDs using a thermally activated delayed fluorescence emitter
書誌事項
- 公開日
- 2015-04
- 資源種別
- journal article
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/j.synthmet.2015.02.009
- 公開者
- Elsevier BV
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説明
Abstract Highly efficient solution processed organic light-emitting devices (OLEDs) incorporating a thermally activated delayed fluorescent (TADF) emitter are developed. As a green emitter, we used 1,2,3,5-tetrakis(carbazol-9-yl)-4,6-dicyanobenzene (4CzIPN). As an electron transporting layer (ETL), we used phenylpyridine-based wide-energy gap materials. These ETLs have high triplet energy over 2.7 eV, relatively high electron mobility of 10 −4 cm 2 V −1 s −1 , and high hole blocking ability to effectively confine all the excitons and carriers in the emissive layer. A solution processed OLED with a structure of [ITO (130 nm)/PEDOT:PSS (30 nm)/4CzIPN 5 wt% doped 4,4′- N , N ′-dicarbazolylbiphenyl (CBP) (35 nm)/bis-4,6-(3,5-di-4-pyridylphenyl)-2-methylpyrimidine (B4PyMPM) (65 nm)/8-quinolinolato lithium (Liq) (3 nm)/Al (100 nm)] were fabricated. This device showed a very low turn-on voltage of 2.5 V at 1 cd m −2 with a maximum power efficiency of over 55 lm W −1 . These performances are highest values reported in solution processed TADF OLEDs so far.
収録刊行物
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- Synthetic Metals
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Synthetic Metals 202 165-168, 2015-04
Elsevier BV
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詳細情報 詳細情報について
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- CRID
- 1360565166125624576
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- ISSN
- 03796779
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- 資料種別
- journal article
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- データソース種別
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