Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe
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- Heng Wang
- Materials Science
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- Xianlong Cao
- Department of Metallurgy and Materials Engineering
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- Yoshiki Takagiwa
- Department of Advanced Materials Science
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- G. Jeffrey Snyder
- Materials Science
抄録
<p>Dopants are not the same in heavily doped semiconductors. For higher mobility dopants should be on the anion site for n-type and the cation site for p-type semiconductors, as these dopants are less disruptive to the band for the majority charge carriers.</p>
収録刊行物
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- Materials Horizons
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Materials Horizons 2 (3), 323-329, 2015
Royal Society of Chemistry (RSC)
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詳細情報 詳細情報について
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- CRID
- 1360565166843518848
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- ISSN
- 20516355
- 20516347
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- データソース種別
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- Crossref
- KAKEN