Enhanced Interlayer Coupling and Magnetoresistance Ratio in Fe<sub>3</sub>Si/FeSi<sub>2</sub>Superlattices

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[Fe3Si/FeSi2]20 superlattices were prepared on Si(111) at an elevated substrate temperature of 300 °C, and the magnetoresistance ratio and interlayer coupling strengths were enhanced by approximately 100 and 34%, respectively, as compared to those of superlattices deposited at room temperature. While the elevated substrate temperature degraded the interface sharpness, the crystalline orientation and the crystallinity of the Fe3Si layers were apparently enhanced. The latters strongly influence on the interlayer coupling and the magnetoresistance ratio. This implies that quantum well states are tightly formed under the well-ordered crystalline planes, and the spin diffusion lengths are improved due to the enhanced crystallinity.

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