Study of Anodic Film Growth on GaAs and Bi<sub>2</sub>Te<sub>3</sub> by in situ Photoacoustic Technique

DOI Web Site Web Site 参考文献24件

この論文をさがす

説明

<jats:p> Anodic film growth on GaAs and Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub> during the anodization process was observed with an <jats:italic>in situ</jats:italic> photoacoustic technique. It was shown that the time dependence of the normalized change in the photoacoustic signal reflects the anodic film growth on GaAs and Bi<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub>. The photoacoustic technique is complementary to the differential reflectance technique; the measured quantity is a change in transmittance of the electrolyte-anodic film-substrate system for the former case and a change in reflectance of the three phase system for the latter case. Experimental results obtained in the photoacoustic measurements are discussed in relation to those previously obtained in the differential reflectance and <jats:italic>in situ</jats:italic> ellipsometry measurements. </jats:p>

収録刊行物

参考文献 (24)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ