Frequency Stabilization of AlGaAs Semiconductor Laser Based on the <sup>85</sup>Rb-D<sub>2</sub> Line
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説明
<jats:p> The frequency of an AlGaAs semiconductor laser was stabilized by using the linear absorption spectrum of the <jats:sup>85</jats:sup>Rb-D<jats:sub>2</jats:sub> line. By controlling the injection current, the frequency stability of 3.0×10<jats:sup>-10</jats:sup>≧σ≧1.4×10<jats:sup>-12</jats:sup> was obtained for 10 ms≦τ≦500 s. First observation of the saturated absorption spectrum of the <jats:sup>85</jats:sup>Rb-D<jats:sub>2</jats:sub> line is demonstrated, which can be used as a frequency reference to improve the frequency stability. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 21 (9A), L561-, 1982-09-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360566396791203200
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- NII論文ID
- 110003928846
- 210000022228
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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