LPE Growth of In<sub>1-x</sub>Ga<sub>x</sub>As<sub>1-y</sub>P<sub>y</sub> with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates

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<jats:p> The growth conditions of In<jats:sub>1-<jats:italic>x</jats:italic> </jats:sub>Ga<jats:sub> <jats:italic>x</jats:italic> </jats:sub>As<jats:sub>1-<jats:italic>y</jats:italic> </jats:sub>P<jats:sub> <jats:italic>y</jats:italic> </jats:sub>, layers on GaAs (111)B substrate and the photoluminescence (PL) properties of these layers are described. The temperature difference liquid phase epitaxial (LPE) method was used for crystal growth. Single PL peak corresponding to band-to-band transition was observed from the layers over the range of 1.73\lesssim<jats:italic>E</jats:italic> <jats:sub>g</jats:sub>\lesssim1.98 eV at 77 K. The half width of the PL band was less than 20 meV and independent of the peak energy. These results show that the grown layers have good crystalline qualities. </jats:p>

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