0.67 µm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE

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<jats:p> Room temperature pulsed operation of 0.67 µm wavelength GaInAsP/AlGaAs lasers on GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched those of the Al<jats:sub>0.6</jats:sub>Ga<jats:sub>0.4</jats:sub>As cladding layers. The threshold current density J<jats:sub>th</jats:sub> of the device was 8 kA/cm<jats:sup>2</jats:sup>. </jats:p>

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