書誌事項
- 公開日
- 1988-09-01
- 権利情報
-
- https://iopscience.iop.org/page/copyright
- https://iopscience.iop.org/info/page/text-and-data-mining
- DOI
-
- 10.1143/jjap.27.l1742
- 公開者
- IOP Publishing
この論文をさがす
説明
<jats:p> Sidegating effects in submicron gate I-HEMTs are reported over a wide range of the drain voltage. A kink in the drain current and the disappearance of the sidegating effect at high drain voltages (3∼4 V) are attributed to the hole injection caused by the impact ionization in the channel. The observation of a new type of sidegating effect at higher drain voltages (>4 V) is also reported. The strong drain voltage dependence is explained by the enhanced electron injection into the substrate caused by the higher hole injection. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 27 (9A), L1742-, 1988-09-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360566396792897152
-
- NII論文ID
- 210000027059
-
- ISSN
- 13474065
- 00214922
-
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