Effects of CF<sub>4</sub>Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO<sub>2</sub>Layer Grown by Atomic Layer Deposition

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公開日
2011-04-01
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.50.04dl06
公開者
IOP Publishing

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説明

<jats:p>We investigated the effect of the carbon tetrafluoride (CF<jats:sub>4</jats:sub>) plasma treatment on pH and pNa sensing characteristics of a light-addressable potentiometric sensor (LAPS) with a 2-nm-thick HfO<jats:sub>2</jats:sub>film grown by atomic layer deposition (ALD). An inorganic CF<jats:sub>4</jats:sub>plasma treatment with different times was performed using plasma enhance chemical vapor deposition (PECVD). For pH detection, the pH sensitivity slightly decreased with increasing CF<jats:sub>4</jats:sub>plasma time. For pNa detection, the proposed fluorinated HfO<jats:sub>2</jats:sub>film on a LAPS device is sensitive to Na<jats:sup>+</jats:sup>ions. The linear relationship between pNa sensitivity and plasma treatment time was observed and the highest pNa sensitivity of 33.9 mV/pNa measured from pNa 1 to pNa 3 was achieved. Compared with that of the same structure without plasma treatment, the sensitivity was improved by twofold. The response mechanism of the fluorinated HfO<jats:sub>2</jats:sub>LAPS is discussed according to the chemical states determined by X-ray photoelectron spectroscopy (XPS) analysis. The analysis of F 1s, Hf 4f, and O 1s spectra gives evidence that the enhancement of pNa sensitivity is due to the high concentration of incorporated fluorine in HfO<jats:sub>2</jats:sub>films by CF<jats:sub>4</jats:sub>plasma surface treatment.</jats:p>

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