Effects of N<sub>2</sub>–O<sub>2</sub>Gas Mixture Ratio on Microorganism Inactivation in Low-Pressure Surface Wave Plasma

DOI Web Site Web Site 参考文献15件

抄録

<jats:p>In this study, the effect of N<jats:sub>2</jats:sub>/O<jats:sub>2</jats:sub>gas mixture ratio on low-pressure surface wave plasma inactivation of spore-forming bacteria was investigated. It was experimentally confirmed from the quadrupole mass spectrometry measurements that the spores were etched by atomic oxygen via converting the hydrogen atoms constituting microorganisms into H<jats:sub>2</jats:sub>O and the carbon into CO<jats:sub>2</jats:sub>. On the basis of results of plasma diagnostics by optical emission spectroscopy and the results of inactivation efficiency by colony-forming units and scanning electron microscope, we found that although there is the highest ultraviolet (UV) emission intensity in pure N<jats:sub>2</jats:sub>plasma and the highest etching efficiency in 90% O<jats:sub>2</jats:sub>/10% N<jats:sub>2</jats:sub>plasma, the inactivation rate of microorganisms was not so efficient. The best inactivation result was obtained in 30–80% O<jats:sub>2</jats:sub>gas mixture ratios after 60 s plasma irradiation. The present results indicated that more efficient inactivation is achieved by the synergetic effects between atomic oxygen etching and the vacuum ultraviolet (VUV)/UV emission by combining both effects via optimizing N<jats:sub>2</jats:sub>/O<jats:sub>2</jats:sub>gas mixture ratio.</jats:p>

収録刊行物

参考文献 (15)*注記

もっと見る

関連プロジェクト

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ