Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition

詳細情報 詳細情報について

• CRID

  1360566399836509440

• NII論文ID

  210000157951

• DOI

  10.7567/1347-4065/ab65d0

• ISSN

  13474065

  00214922

• Web Site

  https://iopscience.iop.org/article/10.7567/1347-4065/ab65d0

  https://iopscience.iop.org/article/10.7567/1347-4065/ab65d0/pdf

• データソース種別

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