Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition

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<jats:title>Abstract</jats:title> <jats:p>Nonpolar <jats:italic>a</jats:italic>-plane AlGaN epi-layers were grown on a semi-polar <jats:italic>r</jats:italic>-plane sapphire substrate with an innovative two-way pulsed-flows metal organic chemical vapor deposition growth technology. A root-mean-square value of 1.79 nm was achieved, and the relative light transmittance of the <jats:italic>a</jats:italic>-plane AlGaN epi-layer was enhanced by 36.9%. These results reveal that the innovative growth method is able to improve the surface morphology and reduce the defect density in nonpolar <jats:italic>a</jats:italic>-plane Al<jats:italic> <jats:sub>x</jats:sub> </jats:italic>Ga<jats:sub>1–</jats:sub> <jats:italic> <jats:sub>x</jats:sub> </jats:italic>N epi-layers, particularly those with an Al composition greater than 0.5, which are key materials for the fabrication of nonpolar AlGaN-based high light emission efficiency deep-ultraviolet light-emitting diodes.</jats:p>

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