Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors

DOI Web Site Web Site Web Site Web Site 被引用文献1件 参考文献30件

この論文をさがす

説明

<jats:title>Abstract</jats:title> <jats:p>We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene field-effect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare the results obtained on the high-<jats:italic>k</jats:italic> top gate and SiO<jats:sub>2</jats:sub> back gate of the same device and show that SiO<jats:sub>2</jats:sub> gate is more stable with respect to BTI.</jats:p>

収録刊行物

被引用文献 (1)*注記

もっと見る

参考文献 (30)*注記

もっと見る

問題の指摘

ページトップへ