Reduction in the write error rate of voltage-induced dynamic magnetization switching using the reverse bias method

DOI Web Site Web Site 7 Citations 24 References

Search this article

Description

Using macro-spin modeling, we studied the reduction in the write error rate (WER) of voltage-induced dynamic magnetization switching by enhancing the effective thermal stability of the free layer using a voltage-controlled magnetic anisotropy change. Marked reductions in WER can be achieved by introducing reverse bias voltage pulses both before and after the write pulse. This procedure suppresses the thermal fluctuations of magnetization in the initial and final states. The proposed reverse bias method can offer a new way of improving the writing stability of voltage-driven spintronic devices.

Journal

Citations (7)*help

See more

References(24)*help

See more

Details 詳細情報について

Report a problem

Back to top