抄録
<jats:p> Capacitance measurements on insulating uncompensated Si:As have been made to temperatures as low as 10mK from 10Hz to 1MHz. As T→0 C(ω,T) shows very little dispersion from hopping and one obtains the dielectric response <jats:italic>ε</jats:italic>'(N)-<jats:italic>ε</jats:italic> <jats:sub>h</jats:sub>=4π<jats:sub>χ</jats:sub>'(N). As N→N<jats:sub>c</jats:sub>-χ'(N)∝(N<jats:sub>c</jats:sub>/N-1)<jats:sup>-ζ</jats:sup> and we obtain ζ=1.18±.08 for N<jats:sub>c</jats:sub>=8.55±.05×10<jats:sup>18</jats:sup>/cm<jats:sup>3</jats:sup>, thus finding ζ=2µ where µ is the DC conductivity exponent. These agree with Si:P results and confirm universality of the exponents and the Mott criterion for n=type Si. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 26 (S3-1), 721-, 1987-01-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360566399846482944
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- NII論文ID
- 210000152994
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- ISSN
- 13474065
- 00214922
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